Features :

.  High-Power Switching Applications Fourth Generation IGBT
.  FRD included between emitter and collector
.  Enhancement mode type
.  High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A) FRD : trr = 0.8 μs (typ.) (di/dt = −20 A/μs)
.  Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A)